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publications
# Year Title Journal Author File
#110 2006 Comment on "Soft Phonon,Dynamical Fluctuations,and a Reversible Phase Transition:Indium Chains on Silicon" Physical Review Letters 97, 189701 (9 citations) H. W. Yeom
#109 2006 Oxidation of Step Edges on Si(001)-c(4x2) Physical Review Letters 97, 036103 (16 citations) C.-H. Chung, H. W. Yeom, B. D. Yu, and I. -W. Lyo
#108 2006 Temperature-dependent adsorption behaviors of NH3 on Si(111)7x7: High-resolution core-level photoemission study Physical Review B 73, 115328 (6 citations) I. K. Cho, Y. K. Kim, and H. W. Yeom
#107 2006 First-principles study of the step oxidation at vicinal Si(001) surfaces Japanese Journal of Applied Physics 45 (3B): 2144-2147 (3 citation) . D. Yu, K. Park, H. Kim, C.-H. Chung, H. W. Yeom, I. W. Lyo, K.-J. Kong, Y. Miyamoto, O. Sugino, and T. Ohno
#106 2006 Long-period surface structure stabilized by Fermi surface nesting: Cu(001)-(/20x/20)R26.6-In Physical Review B 73, 075407 (5 citations) T. Nakagawa, H. W. Yeom, E. Rotenberg, B. Krenzer, S. D. Kevan, H. Okuyama, M. Nishijima, and T. Aruga
#105 2005 Order-disorder phase transition of the Pb-adsorbed Si(110) surface Surface Science 596, L325 (2 citation) Y. K. Kim, J. R. Ahn, E. S. Cho, K.-S. An, H. W. Yeom, H. Koh, E. Rotenberg, and C. Y. Park
#104 2005 Robust one-dimensional metallic band structure of silicide nanowires Physical Review Letters 95, 205504 (30 citations) H. W. Yeom, Y. K. Kim, E. Y. Lee, K. -D. Ryang, and P. G. Kang
#103 2005 Coexistence of Two Different Peierls Distortions within an Atomic Scale Wire: Si(553)-Au Physical Review Letters 95, 196402 (76 citations) J. R. Ahn, P. G. Kang, K. D. Ryang, and H. W. Yeom
#102 2005 Electronic states of two-dimensional adatom gas and nanocluster array: Na on Si(111)7x7 Physical Review B 72, 113309 (14 citation) J. R. Ahn, K. Yoo, J. T. Seo, J. H. Byun, H. W. Yeom
#101 2005 Atomic-scale phase coexistence and fluctuation at the quasi-one-dimensional metal-insulator transition Physical Review Letters 95, 126102 (32 citations) S. J. Park, H. W. Yeom, J. R. Ahn, I. W. Lyo
#100 2005 Real-space investigation of the metal-insulator transition of Si(557)-Au Physical Review B 72, 035323 (34 citations) H. W. Yeom, J. R. Ahn, H. S. Yoon, I. W. Lyo, H. Jeong, S. Jeong
#99 2005 Coverage-dependent adsorption behavior of benzene on Si(100): A high-resolution photoemission study Physical Review B 71, 115311 (24 citations) Y. K. Kim, M. H. Lee, H. W. Yeom
#98 2004 Nitrogen bonding structure in ultrathin silicon oxynitride films on Si(100) prepared by plasma nitridation Physical Review B 70, 165320 (25 citations) Y. K. Kim, H. S. Lee, H. W. Yeom, D. Y. Ryoo, S. B. Huh, J. G. Lee
#97 2004 Preparation of stoichiometric GaN(0001)-1 x 1 studied with spectromicroscopy Surface Science 572, 409-417 (3 citation) S. M. Widstrand, K. O. Nagnusson, M. I. Larsson, L. S. O. Johansson, J. B. Gustafsson, E. Moons, H. W. Yeom, H. Miki, and M. Oshima
#96 2004 Mechanism of gap opening in a triple-band Peierls system: In atomic wires on Si Physical Review Letters 93 106401 (73 citations) J. R. Ahn, J. H. Byun, H. Koh, E. Rotenberg, S. D. Kevan, H. W. Yeom
#95 2004 Non-metallic nature of In-induced nanoclusters on Si(100), Physical Review B 70, 113304 (14 citations) J. R. Ahn, J. H. Byun, W. H. Choi, H. W. Yeom, H. Jeong, S. Jeong
#94 2004 Ab initio study of incorporation of O-2 molecules into Si(001) surfaces: Oxidation by Si ejection Physical Review B 70, 033307 (14 citations) B. D. Yu, Y. J. Kim, J. Jeon, H. Kim, H. W. Yeom, I. W. Lyo, K. J. Kong, Miyamoto Y, Sugino O, Ohno T
#93 2004 Direct evidence of the charge ordered phase transition of indium nanowires on Si(111) Physical Review Letters 93 106402 (51 citations) S. Park, H. W. Yeom, S. H. Min, D. H. Park, and I.-W. Lyo
#92 2004 Electronic transition of Au-induced atomic chains on Si(5 5 12): a strong similarity with the Au/Si(5 5 7) system Physical Review B 69, 233311 (28 citations) J. R. Ahn, H. W. Yeom, E. S. Cho, and C. Y. Park
#91 2004 Carbon bonding site in Si(001)c(4 x 4) prepared by hydrocarbon decomposition Physical Review B 69, 233306 (12 citations) J. R. Ahn, Y. K. Kim, H. S. Lee, and H. W. Yeom

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