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Title Metal-insulator transition on the Si(111)4 x 1-In surface with oxygen impurity
Journal PHYSICAL REVIEW B, 88, 165419 (2013)
Author Sang Hoon Uhm, Han Woong Yeom
Year 2013.10
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We investigate with low-energy-electron diffraction (LEED) and angle-resolved photoelectron specπoscopy
(ARPES) the effect of oxygen adsorbates on the phase transition of the Si(111 )4 × 1-In surface. On this surface,
oxygen was repoπed to increase the transition temperature (Tc) into the distorted 8 × 2 phase. We observed that
while the Tc into the 8 x 2 phase increases up to 180 K, the substantial disorder is also induced on the surface.
ARPES study reveals that the oxygen-induced 8 × 2 phase has the same insulating band structure with that on
the pristine surface at a lower temperature. This indicates clearly that the oxygen-induced 4 × 1- 8 x 2 transition
is a consistent metal-insulator transition with that on the pristine surface. On the other hand, oxygen adsorbates
slightly increase the band filling of the one-dimensional metallic bands of the 4 × 1-In surface. This contrasts
with the expectation of the hole doping and the increased Tc. thus cannot be explained by the doping effect
of adsorbates. A further study of the oxygen-induced 8 × 2 phase is requested to understand the microscopic
mechanism of the adsorbate-induced elevation of the metal-insulator Tc. 


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